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PSMN009-100W

MOSFET RAIL PWR-MOS

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SeekIC No. : 00162088 Detail

PSMN009-100W: MOSFET RAIL PWR-MOS

PSMN009-100W Data Sheet

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Part Number:
PSMN009-100W
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 0.009 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-247 Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Continuous Drain Current : 100 A
Package / Case : TO-247
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.009 Ohms


Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance


Application

• d.c. to d.c. converters
• switched mode power supplies

The PSMN009-100W is supplied in the SOT429 (TO247) conventional leaded package.




Pinout

Connection Diagram


Specifications

SYMBOL
 PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VDSS
 Drain-source voltage Tj = 25 to 175
-
100
V
VDGR
 Drain-gate voltage Tj = 25 to 175; RGS = 20 k
-
100
V
VGS
 Gate-source voltage
-
± 20
V
ID
 Continuous drain current Tmb = 25
-
1001
A
 Tmb = 100
-
79
A
IDM
 Pulsed drain current Tmb = 25
-
300
A
PD
 Total power dissipation Tmb = 25
-
300
W
Tj, Tstg
 Operating junction andstorage temperature
-55
175



Description

SiliconMAX products PSMN009-100W use the latest Philips Trench technology to achieve the lowest possible on-state resistance in each package at each voltage rating.




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