PSMN009-100P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 100 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.0088 Ohms


Features:

· Low on-state resistance
· Fast switching.


Application

· High frequency computer motherboard DC to DC converters
· OR-ing applications.


Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
VDS	drain-source voltage (DC)	25 Tj 175	-	110	V
VDGR	drain-gate voltage (DC)	25 Tj 175 ; RGS = 20 k	-	100	V
VGS	gate-source voltage (DC)		-	± 20	V
VGSM	gate-source voltage	tp50 ms; pulsed; duty cycle 25%; T j 150	-	± 30	V
ID	drain current (DC)	Tmb = 25; VGS = 10 V; Figure 2 and 3	-	75	A
		Tmb = 100; VGS = 10 V; Figure 2	-	65	A
IDM	peak drain current	Tmb = 25 ; pulsed; tp 10 s; Figure 3	-	400	A
Ptot	total power dissipation	Tmb = 25 ; Figure 1	-	230	W
Tstg	storage temperature		-55	+175
Tj	junction temperature		-55	+175
Source-drain diode
IS	source (diode forward) current (DC)	Tmb = 25	-	75	A
ISM	peak source (diode forward) current	Tmb = 25 ; pulsed; tp 10s	-	400	A
Avalanche ruggedness
EDS(AL)S	non-repetitive drain-source avalanche energy	unclamped inductive load; ID = 35 A; tp = 0.1 ms; VDD = 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25	-	120	mJ
IDS(AL)S	non-repetitive avalanche current	unclamped inductive load; VDD = 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25	-	75	A

Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:
PSMN009-100P in SOT78 (TO-220AB)
PSMN009-100B in SOT404 (D²-PAK).