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PSMN008-75B

Features: · Fast switching· Low on-state resistance· Avalanche ruggedness rated.Application· DC to DC converters· Uninterruptable power supplies.Specifications SYMBOL PARAMETER CONDITIONS Min Max UNIT VDS drain-source voltage (DC) Tj = 25 to 175 - 75 V VD...

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PSMN008-75B: Features: · Fast switching· Low on-state resistance· Avalanche ruggedness rated.Application· DC to DC converters· Uninterruptable power supplies.Specifications SYMBOL PARAMETER CONDITIO...

PSMN008-75B Data Sheet

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Part Number:
PSMN008-75B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Fast switching
· Low on-state resistance
· Avalanche ruggedness rated.


Application

· DC to DC converters
· Uninterruptable power supplies.


Specifications

SYMBOL
PARAMETER
CONDITIONS
Min
Max
UNIT
VDS
 drain-source voltage (DC) Tj = 25 to 175
-
75
V
VDGR
 Drain-gate voltage(DC) Tj= 25 to 175; RGS = 20 k
-
75
V
VGS
 Gate-source voltage(DC)  
-
75
A
ID
 drain current (DC) Tmb = 25; VGS = 10 V;
Figure 2 and 3
-
75
A
Tmb = 100; VGS = 10 V;
Figure 2 and 3
-
53
A
IDM
 peak drain current Tmb = 25; pulsed; tp 10 s;
Figure 2 and 3
-
240
A
Ptot
 total power dissipation Tmb = 25; Figure 1
-
230
W
Tstg
 storage temperature  
-55
+175
Tj
 operating junction temperature  
-55
+75
Source-drain diode
IS
 source (diode forward) current (DC) Tmb = 25
-
75
A
ISM
 peak source (diode forward)
current		 Tmb = 25; pulsed; tp 10 s
-
240
A
Avalanche ruggedness
EAS
 non-repetitive avalanche energy Tmb = 25unclamped inductive load; ID = 75 A;
tp = 0.1 ms; VDD 15 V;
RGS = 50 ; VGS = 10 V; starting
Tj = 25; Figure 4
-
360
mJ
IAS
 non-repetitive avalanche current unclamped inductive load;
VDD 15 V; RGS = 50 ;
VGS = 10 V; Figure 4
-
75
A








Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:
PSMN008-75P in SOT78
PSMN008-75B in SOT404 (D2-PAK).


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