Features: ·Very low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· Computer motherboards· Switch mode power supplies.PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) Tj = 25 to...
PSMN005-30K: Features: ·Very low on-state resistance· Fast switching· TrenchMOS™ technology.Application· DC to DC convertors· Computer motherboards· Switch mode power supplies.PinoutSpecifications S...
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Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard...
Features: ·Low on-state resistance·Fast switching.Application· High frequency computer motherboard...
Features: • 'Trench' technology• Very low on-state resistance• Fast switching...
SYMBOL |
PARAMETER | CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
drain-source voltage (DC) | Tj = 25 to 150 |
- |
30 |
V |
VGS |
gate-source voltage (DC) |
- |
± 20 |
V | |
ID |
drain current (DC) | Tsp = 80; VGS = 10V |
- |
20 |
A |
IDM |
peak drain current | Tsp = 25; pulsed; tp 10 s |
- |
60 |
A |
Ptot |
total power dissipation | Tsp = 80 |
- |
3.5 |
|
Tstg |
storage temperature |
-55 |
+150 |
||
Tj |
operating junction temperature |
-55 |
+150 |
||
Source-drain diode | |||||
IS |
source (diode forward) current (DC) | Tsp = 80 |
- |
20 |
A |
ISM |
peak source (diode forward) current | Tsp = 25 ; pulsed; tp 10 s |
- |
60 |
A |