Position: Home  > All Categories> Integrated Circuits (ICs) > PSMN00460B

PSMN00460B

Features: · Low on-state resistance· Fast switching.Application· High frequency computer motherboard DC to DC converters·OR-ing applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage (DC) 25 Tj 175 - 60 V VDGR drai...

product image

PSMN00460B Picture
See larger image
SeekIC No. : 004465883 Detail

PSMN00460B: Features: · Low on-state resistance· Fast switching.Application· High frequency computer motherboard DC to DC converters·OR-ing applications.Specifications SYMBOL PARAMETER CONDITIONS MI...

PSMN00460B Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PSMN00460B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Low on-state resistance
· Fast switching.


Application

· High frequency computer motherboard DC to DC converters
·OR-ing applications.


Specifications

SYMBOL
 PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VDS
 drain-source voltage (DC) 25 Tj 175
-
60
V
VDGR
 drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k
-
60
V
VGS
 gate-source voltage (DC)
-
± 20
V
VGSM
 gate-source voltage tp50 ms; pulsed;
duty cycle 25%; T j 150
-
± 30
V
ID
 drain current (DC) Tmb = 25; VGS = 10 V; Figure 2 and 3
-
75
A
Tmb = 100; VGS = 10 V; Figure 2
-
75
A
IDM
 peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3
-
400
A
Ptot
 total power dissipation Tmb = 25 ; Figure 1
-
230
W
Tstg
 storage temperature
-55
+175
Tj
 junction temperature
-55
+175
Source-drain diode
IS
 source (diode forward) current (DC) Tmb = 25
-
75
A
ISM
 peak source (diode forward) current Tmb = 25 ; pulsed; tp 10s
-
400
A
Avalanche ruggedness
EDS(AL)S
 non-repetitive avalanche current unclamped inductive load;
ID = 75 A; tp = 0.1 ms; VDD = 15 V;
RGS = 50 ; VGS = 10 V; starting Tj = 25
-
500
mJ
IDS(AL)S
 non-repetitive avalanche current unclamped inductive load;
VDD = 15 V; RGS = 50 ; VGS = 10 V;
starting Tj = 25
-
75
A







Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology.

Product availability:
PSMN004-60P in SOT78 (TO-220AB)
PSMN004-60B in SOT404 (D2-PAK).


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Line Protection, Backups
BX0023
A20B-1008-0550
RF and RFID
X3C26P1-30S
1P620S
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
View more