PSMN004-60P,127

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Power - Max: 230W
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 4V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 75A
Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
Gate Charge (Qg) @ Vgs: 168nC @ 10V
Input Capacitance (Ciss) @ Vds: 8300pF @ 25V


Parameters:

Technical/Catalog Information	PSMN004-60P,127
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	3.6 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	8300pF @ 25V
Power - Max	230W
Packaging	Tube
Gate Charge (Qg) @ Vgs	168nC @ 10V
Package / Case	TO-220AB-3
FET Feature	Standard
Drawing Number	568; SOT78; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PSMN004 60P,127 PSMN00460P,127