PSMN003-30P

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Drain-Source Breakdown Voltage : 30 V
Mounting Style : Through Hole
Package / Case : TO-220AB
Continuous Drain Current : 75 A
Packaging : Rail
Resistance Drain-Source RDS (on) : 0.0028 Ohms


Features:

· Low on-state resistance
· Fast switching.


Application

·High frequency computer motherboard DC to DC converters
·OR-ing applications.


Specifications

SYMBOL	PARAMETER	CONDITIONS	Min	Max	UNIT
VDS	drain-source voltage (DC)	Tj = 25 to 175	-	75	V
VDGR	Drain-gate voltage(DC)	Tj= 25 to 175; RGS = 20 k	-	75	V
VGS	gate-source voltage (DC)		-	±20	V
VGSM	gate-source voltage	tp 50 ms; pulsed; duty cycle 25 %; Tj   150	-	±25	V
ID	drain current (DC)	Tmb = 25; VGS = 10 V; Figure 2 and 3	-	75	A
		Tmb = 100; VGS = 10 V; Figure 2	-	75	A
IDM	peak drain current	Tmb = 25; pulsed; tp 10 s; Figure 3	-	400	A
Ptot	total power dissipation	Tmb = 25; Figure 1	-	230	W
Tstg	storage temperature		-55	+175
Tj	operating junction temperature		-55	+75
Source-drain diode
IS	source (diode forward) current (DC)	Tmb = 25	-	75	A
ISM	peak source (diode forward) current	Tmb = 25; pulsed; tp 10 s	-	400	A
Avalanche ruggedness
EAS	non-repetitive avalanche energy	unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD = 15 V; RGS = 50; VGS = 10 V; starting Tj = 25	-	500	mJ
IAS	non-repetitive avalanche current	unclamped inductive load; VDD = 15 V; RGS = 50; VGS = 10 V; starting Tj = 25	-	75	A

Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™¹ technology.

Product availability:
PSMN003-30P in SOT78 (TO-220AB)
PSMN003-30B in SOT404 (D²-PAK)