Features: •25 dBm P1dB@3.3V•30 dB gain•1.5 % EVM @ POUT = +18 dBm•with 54 Mbps OFDM signal•110 mA @ POUT = +18 dBm•with 54 Mbps OFDM signal•Single +3.3V supply voltage•PA power on/off logic•Input and output matched to 50 ohmsApplication•8...
PRFS-P2020-009: Features: •25 dBm P1dB@3.3V•30 dB gain•1.5 % EVM @ POUT = +18 dBm•with 54 Mbps OFDM signal•110 mA @ POUT = +18 dBm•with 54 Mbps OFDM signal•Single +3.3V sup...
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Features: • 29 dBm P1dB@7V• 24 dBm P1dB@3V• 20 dB gain• Input matched to 5...
Features: • 29 dBm P1dB@7V• 24 dBm P1dB@3V• 20 dB gain• Input matched to 5...
Features: • 29 dBm P1dB@7V• 24 dBm P1dB@3V• 20 dB gain• Input matched to 5...
Parameter | Rating | Unit |
DC Power Supply DC Supply Current Maximum RF input level Operating Ambient Temperature Storage Temperature |
6.0 400 -1 -40 to +85 -55 to +150 |
V mA dBm °C °C |
The PRFS-P2020-009 power amplifier is a highperformance GaAs HBT IC designed for use in transmit applications in the 2.4-2.5 GHz frequency band. With a P1dB of 25 dBm, the device is ideal as a final stage for wireless LAN applications requiring high transmit linearity. Designed with advanced linearizing techniques, the device achieves a specific error vector magnitude (EVM) with lesser backoff than conventional PA designs. The PA exhibits unparalleled linearity and efficiency for both 802.11b- and 802.11g-based WLAN systems. The PRFS-P2020-009 on-chip detector is perfect for systems where power sensing is necessary. The part operates off a single +3.3V supply.