Transistors Bipolar (BJT) DIODE/TRANS MODULE
PMEM4010ND,115: Transistors Bipolar (BJT) DIODE/TRANS MODULE
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Features: ·300 mW total power dissipation· Current capability up to 0.5 A· Reduces printed-circuit...
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 40 V |
Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
DC Collector/Base Gain hfe Min : | 200 | Configuration : | Single |
Maximum Operating Frequency : | 150 MHz (Min) | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-457 |
Packaging : | Reel |
Technical/Catalog Information | PMEM4010ND,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | NPN + Diode (Isolated) |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 1A |
Power - Max | 600mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 80mV @ 1mA, 100mA |
Frequency - Transition | 150MHz |
Current - Collector Cutoff (Max) | 100nA |
Mounting Type | Surface Mount |
Package / Case | SOT-457 |
Packaging | Tape & Reel (TR) |
Drawing Number | 568; SOT457; ; 6 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMEM4010ND,115 PMEM4010ND,115 |