Features: ·300 mW total power dissipation· Current capability up to 0.5 A· Reduces printed-circuit board area required· Reduces pick and place costs· Small plastic SMD package· Transistor-Low collector-emitter saturation voltage.· Diode-Ultra high-speed switching-Very low forward voltage-Guard rin...
PMEM1505PG: Features: ·300 mW total power dissipation· Current capability up to 0.5 A· Reduces printed-circuit board area required· Reduces pick and place costs· Small plastic SMD package· Transistor-Low collec...
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Combination of an PNP transistor PMEM1505PG with low VCEsat and high current capability and a planar Schottky barrier rectifier with an integrated guard ring for stress protection in a SOT353 (SC-88A) small plastic package. NPN complement: PMEM1505NG.