Transistors Bipolar (BJT) DIODE/TRANS MODULE
PMEM1505NG,115: Transistors Bipolar (BJT) DIODE/TRANS MODULE
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Features: ·300 mW total power dissipation· Current capability up to 0.5 A· Reduces printed-circuit...
Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 15 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.6 A | ||
Configuration : | Single | Maximum Operating Frequency : | 420 MHz | ||
Maximum Operating Temperature : | + 125 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-353 | Packaging : | Reel |
Technical/Catalog Information | PMEM1505NG,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | NPN + Diode (Isolated) |
Voltage - Collector Emitter Breakdown (Max) | 15V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 25mV @ 500A, 10mA |
Frequency - Transition | 420MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP |
Packaging | Tape & Reel (TR) |
Drawing Number | 568; SOT353; GV, GW; 5 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PMEM1505NG,115 PMEM1505NG,115 |