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PHN103T

Features: · TrenchMOS™ technology· Fast switching· Low on-state resistance· Logic level compatible· Surface mount packageApplication· Motor and actuator driver· Battery management· High speed, low resistance switch.PinoutSpecifications Symbol Parameter Conditions Min Max ...

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SeekIC No. : 004460556 Detail

PHN103T: Features: · TrenchMOS™ technology· Fast switching· Low on-state resistance· Logic level compatible· Surface mount packageApplication· Motor and actuator driver· Battery management· High speed,...

PHN103T Data Sheet

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Part Number:
PHN103T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· TrenchMOS™ technology
· Fast switching
· Low on-state resistance
· Logic level compatible
· Surface mount package


Application

· Motor and actuator driver
· Battery management
· High speed, low resistance switch.


Pinout

Connection Diagram


Specifications

Symbol
Parameter
Conditions
Min
Max
Unit
VDS
 drain-source voltage (DC) Tj = 25 to 150 °C
-
30
V
VDGR
 drain-gate voltage (DC) Tj = 25 to 150 °C; RGS = 20 k
-
30
V
VGS
 gate-source voltage (DC)  
-
±20
V
ID
 drain current (DC) Tsp = 25 °C; VGS = 4.5 V; Figure 2 and 3
-
8.6
A
Tsp = 100 °C; VGS = 4.5 V; Figure 2
-
5.4
A
IDM
 peak drain current Tsp = 25 °C; pulsed; tp 10 s;Figure 3
-
34
A
Ptot
 total power dissipation Tsp = 25 °C; Figure 1
-
6.25
W
Tstg
 storage temperature  
-65
+150
°C
Tj
 junction temperature  
-65
+150
°C
Source-drain diode
IS
 source (diode forward) current (DC) Tsp = 25 °C
-
7
A
ISM
 peak source (diode forward) current Tsp = 25 °C; tp 10 s
-
34
A



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology.

Product availability:PHN103T in SOT96-1 (SO8).




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