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PHB8ND50E

Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse recovery diodePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drai...

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SeekIC No. : 004460410 Detail

PHB8ND50E: Features: • Repetitive Avalanche Rated• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistance• Fast reverse r...

PHB8ND50E Data Sheet

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Part Number:
PHB8ND50E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Repetitive Avalanche Rated
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance
• Fast reverse recovery diode


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj =25 to 150 - 500 V
VDGR Drain-gate voltage Tj =25 to 150 ; RGS = 20 k - 500 V
VGS Gate-source voltage   -- ±30 V
ID Continuous drain current Tmb = 25 ;VGS = 10 V   8.5 A
Tmb = 100 ;VGS = 10 V - 5.4 A
IDM Pulsed drain current Tmb = 25 - 34 A
PD Total dissipation Tmb = 25 - 147 W
Tj, Tstg Operating junction and
storage temperature		   -55 150



Description

N-channel, enhancement mode field-effect power transistor, incorporating a Fast Recovery Epitaxial Diode (FRED). This gives improved switching performance in half bridge and full bridge converters making this PHB8ND50E particularly suitable for inverters, lighting ballasts and motor control circuits.




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