Position: Home  > All Categories> Integrated Circuits (ICs) > PHB80N06LT

PHB80N06LT

Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-sour...

product image

PHB80N06LT Picture
See larger image
SeekIC No. : 004460403 Detail

PHB80N06LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal res...

PHB80N06LT Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHB80N06LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj =25 to 175 - 55 V
VDGR Drain-gate voltage Tj =25 to 175 ; RGS = 20 k - 55 V
VGS Gate-source voltage   -- ±13 V
ID Continuous drain current Tmb = 25   75 A
Tmb = 100 - 56 A
IDM Pulsed drain current Tmb = 25 - 240 A
PD Total power dissipation Tmb = 25 - 178 W
Tj, Tstg Operating junction and
storage temperature		   -55 175



Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The PHB80N06LT device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHP80N06LT is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB80N06LT is supplied in the SOT404 surface mounting package.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Potentiometers, Variable Resistors
RV24YN
WXD4-23-3W
Optical Inspection Equipment
AA924
A21K4B
Switches
US32DMRJ
HBGQ22P-11ET
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
Optoelectronics
SFH7770
TLP423J
Fans, Thermal Management
3610ML-05W-B49
1608KL-05W-B39
View more