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PHB82NQ03LT

Features: ·Logic level compatible·Low gate chargeApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 30 V VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 ...

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SeekIC No. : 004460405 Detail

PHB82NQ03LT: Features: ·Logic level compatible·Low gate chargeApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-sou...

PHB82NQ03LT Data Sheet

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Part Number:
PHB82NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Logic level compatible
·Low gate charge


Application

·DC to DC converters
·Switched mode power supplies




Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 30 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 30 V
VGS gate-source voltage   - ±20 V
VGSM gate-source voltage(DC) TP 50 s; pulsed; duty cycle = 25%   ±25  
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 75  
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 136 W
Tstg storage temperature   -55 +175
Tj operating junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s -

240

 A



Description

N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP82NQ03LT in SOT78 (TO-220AB)

PHB82NQ03LT in SOT404 (D2-PAK)

PHD82NQ03LT in SOT428 (D-PAK).


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