PHB193NQ06T,118

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 300W
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Drain to Source Voltage (Vdss): 55V
Vgs(th) (Max) @ Id: 4V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 75A
Gate Charge (Qg) @ Vgs: 85.6nC @ 10V
Input Capacitance (Ciss) @ Vds: 5082pF @ 25V


Parameters:

Technical/Catalog Information	PHB193NQ06T,118
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	4 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	5082pF @ 25V
Power - Max	300W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	85.6nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	568; SOT404; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHB193NQ06T,118 PHB193NQ06T,118