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PHB193NQ06T

Features: ·Standard level threshold· Very low on-state resistance.Application·Motors, lamps, solenoids · Uninterruptible power supplies·DC-to-DC converters· General industrial applications.PinoutSpecifications Symbol Parameter Conditions Min Unit Max Unit VDS drain-source voltage (DC...

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PHB193NQ06T: Features: ·Standard level threshold· Very low on-state resistance.Application·Motors, lamps, solenoids · Uninterruptible power supplies·DC-to-DC converters· General industrial applications.PinoutSpe...

PHB193NQ06T Data Sheet

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Part Number:
PHB193NQ06T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Standard level threshold 
· Very low on-state resistance.


Application

·Motors, lamps, solenoids
· Uninterruptible power supplies
·DC-to-DC converters
· General industrial applications.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Unit Max Unit
VDS drain-source voltage (DC) 25 °C Tj 175 °C - 55 V
VDGR drain-gate voltage (DC) 25 °C Tj 175 °C; RGS = 20 kW - 55 V
VGS gate-source voltage (DC)   - ±15 V
ID drain current (DC) Tmb = 25 °C; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 °C; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current Tmb = 25 °C; pulsed; tp 10 ms; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 °C; Figure 1 - 300 W
Tstg storage temperature   -55 +175 °C
Tj junction temperature   -55 +175 °C



Description

PHB193NQ06T, N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


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