Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSIDIDMPtotTj, Tstg Drain-source voltageDrain-gate voltageGate-source voltageContinuous dra...
PHB18NQ20T: Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V...
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Features: ·TrenchMOS™ technology·Low on-state resistance·Avalanche ruggedness rated·Logic le...
Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to...
Features: ·Standard level threshold·Very low on-state resistance.Application·Motors, lamps, soleno...
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VDSS VDGR VGS ID IDM Ptot Tj, Tstg |
Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature |
Tj = 25 to 175 Tj = 25 to 175; RGS = 20 k Tmb = 25 ;VGS = 10 V Tmb = 100 ;VGS = 10 V Tmb = 25 Tmb = 25 |
- - - - - - - - 55 |
200 200 ± 20 16 11 64 136 175 |
V V V A A A W |
PHB18NQ20T N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications.