MOSFET TRENCH-100
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Features: ·TrenchMOS™ technology·Low on-state resistance·Avalanche ruggedness rated·Logic le...
Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to...
Features: ·Standard level threshold·Very low on-state resistance.Application·Motors, lamps, soleno...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 18 A | ||
Resistance Drain-Source RDS (on) : | 0.09 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-404 | Packaging : | Reel |
Technical/Catalog Information | PHB18NQ10T,118 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25° C | 18A |
Rds On (Max) @ Id, Vgs | 90 mOhm @ 9A, 10V |
Input Capacitance (Ciss) @ Vds | 633pF @ 25V |
Power - Max | 79W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 21nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | 568; SOT404; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PHB18NQ10T,118 PHB18NQ10T,118 |