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PHB160NQ08T,118

MOSFET TRENCH-75

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SeekIC No. : 00160231 Detail

PHB160NQ08T,118: MOSFET TRENCH-75

PHB160NQ08T,118 Data Sheet

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Part Number:
PHB160NQ08T,118
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0056 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOT-404 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 75 V
Resistance Drain-Source RDS (on) : 0.0056 Ohms
Continuous Drain Current : 75 A
Package / Case : SOT-404


Parameters:

Technical/Catalog InformationPHB160NQ08T,118
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs5.6 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 5585pF @ 25V
Power - Max300W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs91nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number568; SOT404; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHB160NQ08T,118
PHB160NQ08T,118



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