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PHB160NQ08T

Features: ·Standard level threshold·Very low on-state resistance.Application·Motors, lamps, solenoids·DC-to-DC converters·Uninterruptable power supplies·General industrial applications.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 T...

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SeekIC No. : 004460333 Detail

PHB160NQ08T: Features: ·Standard level threshold·Very low on-state resistance.Application·Motors, lamps, solenoids·DC-to-DC converters·Uninterruptable power supplies·General industrial applications.PinoutSpecifi...

PHB160NQ08T Data Sheet

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Part Number:
PHB160NQ08T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Standard level threshold
·Very low on-state resistance.


Application

·Motors, lamps, solenoids
·DC-to-DC converters
·Uninterruptable power supplies
·General industrial applications.




Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 75 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 75 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 300 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 75A;
tp = 0.15 ms; VDD 75 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 		- 560 mJ



Description

PHB160NQ08T N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.


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