Features: ·TrenchMOS™ technology·Very low on-state resistance.Application·DC to DC converters·Switched-mode power supplies·General purpose switch.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 175 - 30 V VDGR drain...
PHB160N03T: Features: ·TrenchMOS™ technology·Very low on-state resistance.Application·DC to DC converters·Switched-mode power supplies·General purpose switch.PinoutSpecifications Symbol Parameter C...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ·TrenchMOS™ technology·Low on-state resistance·Avalanche ruggedness rated·Logic le...
Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to...
Features: ·Standard level threshold·Very low on-state resistance.Application·Motors, lamps, soleno...
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | Tj =25 to 175 | - | 30 | V |
VDGR | drain-gate voltage (DC) | Tj =25 to 175 ; RGS = 20 k | - | 30 | V |
VGS | gate-source voltage | - | ±30 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A |
Tmb = 100 ; VGS = 10 V; Figure 2 and 3 | - | 75 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; | - | 240 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 230 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IS | source (diode forward) current (DC) | Tmb = 25 | - | 75 | A |
ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 240 | A |
Avalanche ruggedness | |||||
EAS | non-repetitive avalanche energy | unclamped inductive load; ID = 75 A; tp = 0.1 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- | 500 | mJ |
IAS | non-repetitive avalanche current | unclamped inductive load; VDD 25 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 |
- | 75 | A |