Position: Home  > All Categories> Integrated Circuits (ICs) > PHB152NQ03LTA

PHB152NQ03LTA

Features: ·Logic level threshold·Low gate charge·Low on-state resistance·Low thermal resistance.Application·DC-to-DC converters·Switched-mode power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 25 V VDGR d...

product image

PHB152NQ03LTA Picture
See larger image
SeekIC No. : 004460331 Detail

PHB152NQ03LTA: Features: ·Logic level threshold·Low gate charge·Low on-state resistance·Low thermal resistance.Application·DC-to-DC converters·Switched-mode power supplies.PinoutSpecifications Symbol Paramet...

PHB152NQ03LTA Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PHB152NQ03LTA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Logic level threshold
·Low gate charge
·Low on-state resistance
·Low thermal resistance.


Application

·DC-to-DC converters
·Switched-mode power supplies.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 25 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 25 V
VGS gate-source voltage   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 - 75 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 150 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 240 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 75A;
tp = 0.46 ms; VDD 25 V; RGS = 50 ; VGS = 10 V; starting at Tj = 25 		- 560 mJ



Description

PHB152NQ03LTA Logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Motors, Solenoids, Driver Boards/Modules
IHSS57-36-20
ASD-B2-1521-B
Test Equipment
TOP853
TOP2005
Discrete Semiconductor Products
T508N12TOF
MUR20040
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Cable Assemblies
CS1W-CN114
XW2Z-500T
Power Supplies - External/Internal (Off-Board)
A76L-0300-0077
A5E01231722-F2
View more