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PHB152NQ03LT

Features: ·Low gate charge·Low on-state resistance.Application·Optimized for DC to DC convertors.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 150 - 25 V VDGR drain-gate voltage (DC) Tj =25 to 150 ; RGS = 20 k - 25 ...

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SeekIC No. : 004460330 Detail

PHB152NQ03LT: Features: ·Low gate charge·Low on-state resistance.Application·Optimized for DC to DC convertors.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage ...

PHB152NQ03LT Data Sheet

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Part Number:
PHB152NQ03LT
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Low gate charge
·Low on-state resistance.


Application

·Optimized for DC to DC convertors.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 150 - 25 V
VDGR drain-gate voltage (DC) Tj =25 to 150 ; RGS = 20 k - 25 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 75 A
VGS gate-source voltage (DC) - ±20 V
IDM peak drain current Tmb = 25 ; pulsed; tp 10 ms; Figure 3 - 240 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 230 W
Tstg storage temperature +175
Tj junction temperature +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 ms - 240 A



Description

N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP152NQ03LT in SOT78 (TO-220AB)

PHB152NQ03LT in SOT404 (D2-PAK).


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