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PHB14NQ20T

Features: • 'Trench' technology• Low on-state resistance• Fast switching• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj =25 to 150 - 200 V VDGR...

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SeekIC No. : 004460329 Detail

PHB14NQ20T: Features: • 'Trench' technology• Low on-state resistance• Fast switching• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARA...

PHB14NQ20T Data Sheet

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Part Number:
PHB14NQ20T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Low on-state resistance
• Fast switching
• High thermal cycling performance
• Low thermal resistance


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj =25 to 150 - 200 V
VDGR Drain-gate voltage Tj =25 to 150 ; RGS = 20 k - 200 V
VGS Gate-source voltage   -- ±20 V
ID Continuous drain current Tmb = 25 ;VGS = 10 V   14 A
Tmb = 100 ;VGS = 10 V - 10 A
IDM Pulsed drain current Tmb = 25 - 56 A
PD Total dissipation Tmb = 25 - 125 W
Tj, Tstg Operating junction and
storage temperature		   -55 175



Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. PHB14NQ20T is intended for use in dc to dc converters and general purpose switching applications.




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