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PHB12NQ15T

Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSS Drain-source voltage Tj =25 to 175 - 150 V VDGR Drain-gate voltage Tj =25 to 175 ; RG...

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SeekIC No. : 004460324 Detail

PHB12NQ15T: Features: • 'Trench' technology• Low on-state resistance• Fast switching• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT V...

PHB12NQ15T Data Sheet

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Part Number:
PHB12NQ15T
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• 'Trench' technology
• Low on-state resistance
• Fast switching
• Low thermal resistance


Pinout

Connection Diagram




Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS Drain-source voltage Tj =25 to 175 - 150 V
VDGR Drain-gate voltage Tj =25 to 175 ; RGS = 20 k - 150 V
VGS Gate-source voltage   -- ±20 V
ID Continuous drain current Tmb = 25 ; VGS = 10 V   12.5 A
Tmb = 100 ; VGS = 10 V - 8.8 A
IDM Pulsed drain current Tmb = 25 - 50 A
PD Total power dissipation Tmb = 25 - 88 W
Tj, Tstg Operating junction and
storage temperature		   -55 175



Description

N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

The PHP12NQ15T is supplied in the SOT78 (TO220AB) conventional leaded package.

The PHB12NQ15T is supplied in the SOT404 (D2PAK) surface mounting package.

The PHD12NQ15T is supplied in the SOT428 (DPAK) surface mounting package.




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