PHB125N06LT Selling Leads, Price trend, PHB125N06LT DataSheet download, circuit diagram from SeekIC.com

Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal resistancePinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDSSVDGRVGSIDIDM...

See larger image

SeekIC No. : 004460321 Detail

PHB125N06LT: Features: • 'Trench' technology• Very low on-state resistance• Fast switching• Stable off-state characteristics• High thermal cycling performance• Low thermal res...

PHB125N06LT Data Sheet

Get Latest Price

Part Number:: PHB125N06LT
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

SeekIC Buyer Protection PLUS - newly updated for 2013!

Escrow Protection.
Guaranteed refunds.
Secure payments.
Learn more >>

Month Sales

268 Transactions

Rating

evaluate (4.8 stars)

Upload time: 2024/11/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.

Recent History
What is this?

PHB100N03LT evaluate
Features: ·TrenchMOS™ technology·Low on-state resistance·Avalanche ruggedness rated·Logic le...
PHB101NQ03LT evaluate
Features: ·Low gate charge·Low on-state resistance.Application·Optimized as a control FET in DC to...
PHB101NQ04T evaluate
Features: ·Standard level threshold·Very low on-state resistance.Application·Motors, lamps, soleno...

Product Details

Description

Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Stable off-state characteristics
• High thermal cycling performance
• Low thermal resistance

Pinout

Connection Diagram

Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DSSV_DGR V_GS I_D I_DM P_totT_j, T_stg	Drain-source voltage Drain-gate voltage Gate-source voltage a Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature	T_j = 25 to 175 T_j= 25 to 175; R_GS= 20 kW T_mb = 25 T_mb = 100 T_mb = 25 T_mb = 25	- - - - - - - - 55	55 55 ± 13 75 75 240 250 175	V V V A A A W

Description

N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using 'trench' technology. The PHB125N06LT has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications.

Customers Who Bought This Item Also Bought

BT06蓝牙串口模块 51单片机兼容HC-06
US $$1.30 - 1.50 / Piece

Supply Ability:100Day

View details
PM150RSA060-S81AH0G,IGBT
US $$41.70 - 42.00 / Piece

Supply Ability:10Day

View details
ARDUINO IIC/I2C 液晶模块，IGBT
US $$4.50 - 4.80 / Piece

Supply Ability:100Day

View details
DS-4008HCI English version video capture card Hai Kang
US $$120.00 - 120.00 / Piece

Supply Ability:120Week

View details
2DI300A-050 MODULE
US $$30.00 - 30.00 / Piece

Supply Ability:100Day

View details

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.

PHB125N06LT

product image

floor Price/Ceiling Price

Price Break

Month Sales

Rating

Payment Methods

Recent History

Description

Customers Who Bought This Item Also Bought

Batteries, Chargers, Holders(975)

Potentiometers, Variable Resistors(1370)

Transformers(1503)

Audio Products(940)

Motors, Solenoids, Driver Boards/Modules(2035)

Filters(263)