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PHB119NQ06T,118

MOSFET TRENCHMOS (TM)FET

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SeekIC No. : 00163247 Detail

PHB119NQ06T,118: MOSFET TRENCHMOS (TM)FET

PHB119NQ06T,118 Data Sheet

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Part Number:
PHB119NQ06T,118
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0071 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOT-404 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0071 Ohms
Package / Case : SOT-404


Parameters:

Technical/Catalog InformationPHB119NQ06T,118
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs7.1 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 2820pF @ 25V
Power - Max200W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs53nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number568; SOT404; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHB119NQ06T,118
PHB119NQ06T,118



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