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PHB112N06T

Features: ·Fast switching·Very low on-state resistance.Application·General purpose switching·Switched mode power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) Tj =25 to 175 - 55 V VDGR drain-gate voltage (DC) Tj =25 to ...

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SeekIC No. : 004460316 Detail

PHB112N06T: Features: ·Fast switching·Very low on-state resistance.Application·General purpose switching·Switched mode power supplies.PinoutSpecifications Symbol Parameter Conditions Min Max Unit V...

PHB112N06T Data Sheet

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Part Number:
PHB112N06T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Fast switching
·Very low on-state resistance.


Application

·General purpose switching
·Switched mode power supplies.


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj =25 to 175 - 55 V
VDGR drain-gate voltage (DC) Tj =25 to 175 ; RGS = 20 k - 55 V
VGS gate-source voltage(DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 10 V; Figure 2 and 3 - 52.5 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 400 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 200 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 400 A
Avalanche ruggedness
EAS non-repetitive drain-source
avalanche energy		 unclamped inductive load;IAS = 60A;
tp = 0.1 ms; VDD 25 V;RGS = 50 VGS = 5 V; starting Tj = 25 Figure 4 		- 360 mJ



Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™1 technology.

Product availability:

PHP112N06T in SOT78 (TO-220AB)

PHB112N06T in SOT404 (D2-PAK).


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