PHB110NQ08LT,118

MOSFET N-CH 75V 75A D2PAK

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PHB110NQ08LT,118: MOSFET N-CH 75V 75A D2PAK

floor Price/Ceiling Price

Part Number:
PHB110NQ08LT,118
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Series: TrenchMOS™ Manufacturer: NXP Semiconductors
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 75V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 75A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 2V @ 1mA Gate Charge (Qg) @ Vgs: 127.3nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 6631pF @ 25V
Power - Max: 230W Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 75V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Power - Max: 230W
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 2V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 75A
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 25A, 10V
Gate Charge (Qg) @ Vgs: 127.3nC @ 10V
Input Capacitance (Ciss) @ Vds: 6631pF @ 25V


Parameters:

Technical/Catalog InformationPHB110NQ08LT,118
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs8.5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 6631pF @ 25V
Power - Max230W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs127.3nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number568; SOT404; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHB110NQ08LT,118
PHB110NQ08LT,118



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