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PHB108NQ03LT

Features: ·Logic level compatible·Very low on-state resistanceApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 175 - 25 V VDGR drain-gate voltage (DC) 25 Tj 17...

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SeekIC No. : 004460311 Detail

PHB108NQ03LT: Features: ·Logic level compatible·Very low on-state resistanceApplication·DC to DC converters·Switched mode power suppliesPinoutSpecifications Symbol Parameter Conditions Min Max Unit V...

PHB108NQ03LT Data Sheet

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Part Number:
PHB108NQ03LT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·Logic level compatible
·Very low on-state resistance


Application

·DC to DC converters
·Switched mode power supplies


Pinout

Connection Diagram




Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 175 - 25 V
VDGR drain-gate voltage (DC) 25 Tj 175 ; RGS = 20 k - 25 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 75 A
Tmb = 100 ; VGS = 5 V; Figure 2 and 3 - 60 A
VGS gate-source voltage   - ±20 V
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 108 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 180 W
Tstg storage temperature   -55 +175
Tj junction temperature   -55 +175
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 75 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 108 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 43A;
tp = 0.25 ms; VDD 15 V; RGS = 50 ; VGS = 10 V; starting Tj = 25 		- 180 mJ



Description

N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.

Product availability:

PHP108NQ03LT in SOT78 (TO-220AB)

PHB108NQ03LT in SOT404 (D2-PAK)

PHD108NQ03LT in SOT428 (D-PAK).


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