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PH8230E,115

MOSFET N-CH TRENCH 30V

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SeekIC No. : 00151802 Detail

PH8230E,115: MOSFET N-CH TRENCH 30V

PH8230E,115 Data Sheet

floor Price/Ceiling Price

US $ .56~.88 / Piece | Get Latest Price
Part Number:
PH8230E,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.88
  • $.68
  • $.62
  • $.56
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/5/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 67 A
Resistance Drain-Source RDS (on) : 0.0082 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-669 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Triple Source
Resistance Drain-Source RDS (on) : 0.0082 Ohms
Continuous Drain Current : 67 A
Package / Case : SOT-669


Parameters:

Technical/Catalog InformationPH8230E,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C67A
Rds On (Max) @ Id, Vgs8.2 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 1400pF @ 10V
Power - Max62.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs14nC @ 5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH8230E,115
PH8230E,115
568 2350 6 ND
56823506ND
568-2350-6



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