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PH8230E

Features: ·Low thermal resistance ·SO8 equivalent area footprint· Low gate drive current·Low on-state resistance.Application· DC-to-DC converters · Switched-mode power supplies· Portable appliances · Notebook computers.Specifications Symbol Parameter Parameter Conditions Min Max...

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SeekIC No. : 004460295 Detail

PH8230E: Features: ·Low thermal resistance ·SO8 equivalent area footprint· Low gate drive current·Low on-state resistance.Application· DC-to-DC converters · Switched-mode power supplies· Portable appliances ...

PH8230E Data Sheet

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Part Number:
PH8230E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

·Low thermal resistance
·SO8 equivalent area footprint
· Low gate drive current
· Low on-state resistance.




Application

· DC-to-DC converters
· Switched-mode power supplies
· Portable appliances
· Notebook computers.


Specifications

Symbol Parameter
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25 °C Tj 150 °C
30
V
VGS
gate-source voltage (DC)
Tmb = 25 °C; VGS = 10 V; Figure 2 and 3
±20
V
Tmb = 100 °C; VGS = 10 V; Figure 2
67
A
ID
drain current (DC)
Tmb = 25 °C; pulsed; tp 10S; Figure 3
42
A
IDM
peak drain current
Tmb = 25 °C; Figure 1
268
A
Ptot
total power dissipation
62.5
W
Tstg
storage temperature
-55
+150
°C
Tj
junction temperature
-55
+150
°C



Description

·N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology.
·Product availability:
·PH8230E in SOT669 (LFPAK).




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