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PH8230

Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched mode power supplies·Notebook computers.PinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-s...

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SeekIC No. : 004460294 Detail

PH8230: Features: ·Low thermal resistance·Low gate drive current·SO8 equivalent area footprint·Low on-state resistance.Application·DC-to-DC converters·Portable appliances·Switched mode power supplies·Notebo...

PH8230 Data Sheet

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Part Number:
PH8230
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

·Low thermal resistance
·Low gate drive current
·SO8 equivalent area footprint
·Low on-state resistance.


Application

·DC-to-DC converters
·Portable appliances
·Switched mode power supplies
·Notebook computers.


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) Tj = 25 to 175 - 30 V
VGS gate-source voltage (DC)   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10 V; - 30 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; - 120 A
Ptot total power dissipation Tmb = 25 ; - 50 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 30 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 120 A



Description

N-channel enhancement mode field-effect power transistor in a SOT669 (LFPAK) package.

Product availability:

PH8230 in SOT669 (LFPAK).


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