PH2856-3

PH2856-3 is a type of linear accelerator pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is class C operation. The forth one is it is interdigitated geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.The eighth one is internal input and output impedance matching.
 
There are some absolute maximum ratings about PH2856-3.Collector-emitter votlage(V_CES) is 60 V.Emitter-base voltage(V_EBO) is 3.0 V.Collector current(peak)(Ic) is 0.35 A. Power dissipation(P_D) is 25 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 60 V min when Ic is 5 mA. Collector-emitter leakage current(I_CES) is 0.5 mA max when V_CE is 40 V.Thermal resistance is 7.0/W max when Vcc is 36 V,Pin is 0.3 W, F is 2.856 GHz.Output power(Pout) is 3.0 W min when Vcc is 36 V,Pin is 0.3 W, F is 2.856 GHz.Power gian(Gp) is 10.0 dB min when Vcc is 36 V,Pin is 0.3 W, F is 2.856 GHz. Collector efficiency is 35% min when Vcc is 36 V,Pin is 0.3 W, F is 2.856 GHz.Input return loss is 6 dB min when Vcc is 36 V,Pin is 0.3 W, F is 2.856 GHz.Load mismatch tolerance is 3:1 typ when Vcc is 36 V,Pin is 0.3 W, F is 2.856 GHz.

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