PH2856-22

PH2856-22  is a type of linear accelerator pulsed power transistor which has many unique features: The first one is NPN silicon Microwave power transistor. The second one is common emitter configuration. The third one is it is class C operation. The forth one is it is high efficiency interdigitated geometry. The fifth one is diffused emitter ballasting resistors. The sixth one is gold matallization system. The seventh one is Hermatic metal/ceramic package.The eighth one is internal input and output impedance matching.
 
There are some absolute maximum ratings about PH2856-22.Collector-emitter votlage(V_CES) is 63 V.Emitter-base voltage(V_EBO) is 3.0 V.Collector current(peak)(Ic) is 2.1 A. Power dissipation(P_D) is 109 W.Junction temperature(Tj) is 200. Storage temperature(Tstg) is -65 to +200.Otherwise, there are some electrical characteristics. Collector-emitter breakdwon voltage(BV_CES) is 63 V min when Ic is 10 mA. Collector-emitter leakage current(I_CES) is 1.5 mA max when V_CE is 40 V.Collector-emitter breakdwon voltage(BV_CES) is 63 V min when Ic is 10 mA.Collector-emitter leakage current(I_CES) is 1.5 mA max when V_CE is 40 V. Thermal resistance is 1.60/W max when Vcc is 32 V,Pin is 3.0 W, F is 2.856 GHz.Output power(Pout) is 22 W min when Vcc is 32 V,Pin is 3.0 W, F is 2.856 GHz.Power gian(Gp) is 8.7 dB min when Vcc is 32 V,Pin is 3.0 W, F is 2.856 GHz. Collector efficiency is 50% min when Vcc is 32 V,Pin is 3.0 W, F is 2.856 GHz.Input return loss is 6 dB min when Vcc is 32 V,Pin is 3.0 W, F is 2.856 GHz.Load mismatch tolerance is 3:1 typ when Vcc is 32 V,Pin is 3.0 W, F is 2.856 GHz.

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