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PH2856-160

Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Class C Operation·High Efficiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input and Output Impedance Matching·Hermetic-Metal/Ceramic PackageSpecifications Parame...

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PH2856-160: Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Class C Operation·High Efficiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·I...

PH2856-160 Data Sheet

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Part Number:
PH2856-160
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

·NPN Silicon Microwave Power Transistor
·Common Base Configuration
·Class C Operation
·High Efficiency Interdigitated Geometry
·Diffused Emitter Ballasting Resistors
·Gold Metalization System
·Internal Input and Output Impedance Matching
·Hermetic-Metal/Ceramic Package


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 15.0 A
Total Power Dissipation PTOT 700 W
Junction Temperature Tj 200
Storage Temperature
 Tstg -65 to +200



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