PD - 93863E

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain or So...

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SeekIC No. : 004456896 Detail

PD - 93863E: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightS...

floor Price/Ceiling Price

Part Number:
PD - 93863E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Surface Mount
· Light Weight



Specifications

Parameter
Units
ID @ VGS = 12V, TC = 25
Continuous Drain or Source Current
12*
A
ID @ VGS = 12V, TC = 100
Continuous Drain or Source Current
8.0
IDM
Pulsed Drain Current
48
PD @ TC = 25
Max. Power Dissipation
25
W
Linear Derating Factor
0.2
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
156
mJ
IAR
Avalanche Current
12
A
EAR
Repetitive Avalanche Energy
2.5
mJ
dv/dt
Peak Diode Recovery dv/dt
2.3
V/ns
TJ, TSTG
Opeating and Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 ( for 5 sec.)
Weight
0.42 (Typical)
g


* Current is limited by package


Description

International Rectifier's R5TM technology provides high performance power MOSFETs PD - 93863E for space applications. These PD - 93863E have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These PD - 93863E retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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