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PD - 91396C

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Cur...

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SeekIC No. : 004456891 Detail

PD - 91396C: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightS...

PD - 91396C Data Sheet

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Part Number:
PD - 91396C
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
Continuous Drain Current
51
A
ID @ VGS = 12V, TC = 100
Continuous Drain Current
32.5
IDM
Pulsed Drain Current
204
PD @ TC = 25
Max. Power Dissipation
300
W
Linear Derating Factor
2.4
W/
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
51
A
EAR
Repetitive Avalanche Energy
30
mJ
dv/dt
Peak Diode Recovery dv/dt
7.3
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 ( for 5s)
Weight
3.3 (Typical)
g
For footnotes refer to the last page


Description

International Rectifier's RADHard HEXFET® technology of PD - 91396C provides high performance power MOSFETs for pace applications. This technology has over a decade f proven performance and reliability in satellite pplications. These PD - 91396C have been characterized or both Total Dose and Single Event Effects (SEE). he combination of low Rdson and low gate charge educes the power losses in switching applications uch as DC to DC converters and motor control. These PD - 91396C retain all of the well established advantages f MOSFETs such as voltage control, fast switching, ase of paralleling and temperature stability of electrical arameters.




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