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PD - 91708B

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge·Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Contin...

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PD - 91708B: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge·Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Packag...

PD - 91708B Data Sheet

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Part Number:
PD - 91708B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
·Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
 Continuous Drain or Source Current
75*
A
ID @ VGS = 12V, TC = 100
 Continuous Drain or Source Current
75*
IDM
 Pulsed Drain Current
300
PD @ TC = 25
 Max. Power Dissipation
300
W
 Linear Derating Factor
2.4
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
800
mJ
IAR
 Avalanche Current
75
A
EAR
 Repetitive Avalanche Energy
30
mJ
dv/dt
 Peak Diode Recovery dv/dt
0.35
 V/ns
TJ, TSTG
 Opeating and Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 ( for 5 sec.)
 Weight
3.3 (Typical)
g


For footnotes refer to the last page *Current is limited by internal wire diameter


Description

International Rectifier's RADHard HEXFET® technology of PD - 91708B provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These PD - 91708B have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These PD - 91708B retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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