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PD - 93793E

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre and Post Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Electrically IsolatedSpecifications Parameter ...

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PD - 93793E: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre and Post Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· E...

PD - 93793E Data Sheet

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Part Number:
PD - 93793E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Identical Pre and Post Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electrically Isolated


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
 Continuous Drain or Source Current
12*
A
ID @ VGS = 12V, TC = 100
 Continuous Drain or Source Current
10
IDM
 Pulsed Drain Current
48
PD @ TC = 25
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
520
mJ
IAR
 Avalanche Current
12
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
3.0
 V/ns
TJ, TSTG
 Opeating and Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 ( for 5 sec.)
 Weight
0.42 (Typical)
g



Description

International Rectifier's R5TM technology of PD - 93793E provides high performance power MOSFETs for space applications. These PD - 93793E have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These PD - 93793E retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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