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PD - 93827A

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous...

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SeekIC No. : 004456895 Detail

PD - 93827A: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light...

PD - 93827A Data Sheet

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Part Number:
PD - 93827A
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25°C
Continuous Drain Current
12.5
A
ID @ VGS = 12V, TC =100°C
Continuous Drain Current
8
IDM
Pulsed Drain Current
50
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/
VGS
Gate-to-Source Voltage
20
V
EAS
Single Pulse Avalanche Energy
60
mJ
IAR
Avalanche Current
12.5
A
EAR
Repetitive Avalanche Energy
7.5
mJ
dV/dt
Peak Diode Recovery dv/dt
4.4
V/ns
TJ
Operating Junction
-55 to 150
TSTG
Storage Temperature Range
 Lead Temperature
300 (0.063in./1.6mm from case for 10sec)
Weight
4.3 ( Typical )
g



Description

International Rectifier's R5TM technology of PD - 93827A provides high performance power MOSFETs for space applications. These PD - 93827A have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These PD - 93827A retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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