Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel · 300KHz High Speed Switching Possible Application· Power Supply for the Communications andthe Induction HeatingSpecifications Ratings Symbol PD...
PD10M440H: Features: · Dual MOS FETs Cascaded Circuit · Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel · 300KHz High Speed Switching Possible Application· Power ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
· Dual MOS FETs Cascaded Circuit
· Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel
· 300KHz High Speed Switching Possible
· Power Supply for the Communications and the Induction Heating
Ratings |
Symbol |
PD10M441H |
PD10M440H |
Unit | |
Drain-Source Voltage (VGS=0V) |
VDSS |
450 |
500 |
V | |
Gate - Source Voltage |
VGSS |
+/ - 20 |
V | ||
Continuous Drain Current |
Duty=50% |
ID |
85 (Tc=25) |
A | |
D.C. |
60 (Tc=25) | ||||
Pulsed Drain Current |
IDM |
170 Tc=25) |
A | ||
Total Power Dissipation |
PD |
730 Tc=25) |
W | ||
Operating Junction Temperature Range |
Tjw |
-40 to +150 |
|||
Storage Temperature Range |
Tstg |
-40 to +125 |
|||
Isolation Voltage Terminals to Base AC, 1 min.) |
VISO |
2000 |
V | ||
Mounting Torque | Module Base to Heatsink |
FTOR |
3.0 |
N*m | |
Bus Bar to Main Terminals |
2.0 |