Features: • Planar Structure• High Responsivity• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• Optical Communication Systems• Test and Measurement• SensingSpecifications PARAMETER MIN. MAX. UNIT Forward C...
PD100-003-0xx: Features: • Planar Structure• High Responsivity• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• Optical Communication Systems• Tes...
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Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
PARAMETER |
MIN. |
MAX. |
UNIT |
Forward Current |
- |
5 |
mA |
Reverse Current |
- |
500 |
A |
Reverse Voltage |
- |
30 |
V |
Optical input power |
- |
5 |
mW |
Operating Case Temperature |
-40 |
+85 |
|
Storage Temperature |
-40 |
+85 |
|
Soldering temperature (10 seconds) |
- |
+250 |
The PD100-003-0xx is an InGaAs photodiode with a photosensitive region 100m in diameter. It is intended for use in high speed, low noise communication systems (up to 1.5Gb/s data rates) as well as applications in test and measurement and other optical power sensing devices. The large active area of PD100-003-0xx allows the use of multimode fiber.
Reliability of PD100-003-0xx is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V).The device can be assembled on a ceramic submount or in a TO can. It can be pigtailed with SC,FC or ST connectors (UPC or APC). PD100-003-0xx can also be mounted in an SC, ST of FC receptacle. Custom packages are an option.