Features: • Planar Structure• High Responsivity• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• Optical Communication Systems• Test and Measurement• SensingSpecifications PARAMETER MIN. MAX. UNIT Forward C...
PD100: Features: • Planar Structure• High Responsivity• Low Dark Current• Dielectric Passivation• 100% Purge Burn-inApplication• Optical Communication Systems• Tes...
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Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
PARAMETER |
MIN. |
MAX. |
UNIT |
Forward Current |
- |
5 |
mA |
Reverse Current |
- |
500 |
A |
Reverse Voltage |
- |
30 |
V |
Optical input power |
- |
5 |
mW |
Operating Case Temperature |
-40 |
+85 |
|
Storage Temperature |
-40 |
+85 |
|
Soldering temperature (10 seconds) |
- |
+250 |
The PD100 is an InGaAs photodiode with a photosensitive region 100m in diameter. It is intended for use in high speed, low noise communication systems (up to 1.5Gb/s data rates) as well as applications in test and measurement and other optical power sensing devices. The large active area of PD100 allows the use of multimode fiber.
Reliability of PD100 is assured by hermetic sealing and 100% purge burn-in (200°C, 15 hours, Vr = 20V).The device can be assembled on a ceramic submount or in a TO can. PD100 can be pigtailed with SC,FC or ST connectors (UPC or APC). It can also be mounted in an SC, ST of FC receptacle. Custom packages are an option.