Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• Sensing• High Sensitivity InstrumentationSpecifications PARAMETER MIN. MAX. UNIT Forward Current - 200 mA Reverse Current ...
PD10M: Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• Sensing• High Sensitivity InstrumentationSpecifications...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
Features: • Planar Structure• High Responsivity• Low Dark Current• Dielect...
PARAMETER |
MIN. |
MAX. |
UNIT |
Forward Current |
- |
200 |
mA |
Reverse Current |
- |
30 |
mA |
Reverse Voltage |
- |
0.5 |
V |
Operating Case Temperature |
-40 |
+85 |
|
Storage Temperature |
-40 |
+85 |
|
Soldering temperature (10 seconds) |
- |
+250 |
The PD10M is an InGaAs photodiode with a 10mm photosensitive region. The device is offered in both circular (10mm in diameter) and square (10mm edge length) formats.Applications include sensing and other high sensitivity instrumentation. Class A devices feature very low dark current and high shunt resistance.
High reliability of PD10M is assured through planar semiconductor design and dielectric passivation. The device is available in a ceramic flat pack. Custom packages are an option.