PD10M

Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• Sensing• High Sensitivity InstrumentationSpecifications PARAMETER MIN. MAX. UNIT Forward Current - 200 mA Reverse Current ...

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PD10M Picture
SeekIC No. : 004456970 Detail

PD10M: Features: • Planar Structure• Dielectric Passivation• High Shunt Resistance• High ResponsivityApplication• Sensing• High Sensitivity InstrumentationSpecifications...

floor Price/Ceiling Price

Part Number:
PD10M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

• Planar Structure
• Dielectric Passivation
• High Shunt Resistance
• High Responsivity



Application

• Sensing
• High Sensitivity Instrumentation



Specifications

PARAMETER
MIN.
MAX.
UNIT
Forward Current
-
200
mA
Reverse Current
-
30
mA
Reverse Voltage
-
0.5
V
Operating Case Temperature
-40
+85
Storage Temperature
-40
+85
Soldering temperature (10 seconds)
-
+250
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.


Description

The PD10M is an InGaAs photodiode with a 10mm photosensitive region. The device is offered in both circular (10mm in diameter) and square (10mm edge length) formats.Applications include sensing and other high sensitivity instrumentation. Class A devices feature very low dark current and high shunt resistance.

High reliability of PD10M is assured through planar semiconductor design and dielectric passivation. The device is available in a ceramic flat pack. Custom packages are an option.




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