Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 ...
PD-96973: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically ...
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Parameter |
Units | ||
ID @ VGS = 12V, TC = 25 |
Continuous Drain or Source Current |
45* |
A |
ID @ VGS = 12V, TC = 100 |
Continuous Drain or Source Current |
45* | |
IDM |
Pulsed Drain Current |
180 | |
PD @ TC = 25 |
Max. Power Dissipation |
208 |
W |
Linear Derating Factor |
1.67 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
1250 |
mJ |
IAR |
Avalanche Current |
45 |
A |
EAR |
Repetitive Avalanche Energy |
20.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
1.08 |
V/ns |
TJ, TSTG |
Opeating and Storage Temperature Range |
-55 to 150 |
|
Pckg. Mounting Surface Temp. |
300 (0.063 in. /1.6 mm from case for 10s) | ||
Weight |
3.3 (Typical) |
g |
International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. The PD-96973 has been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. The PD-96973 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.