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PD-93824E

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed·Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain or Source Curre...

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SeekIC No. : 004457337 Detail

PD-93824E: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed·Ceramic Package· Light WeightSpecificati...

PD-93824E Data Sheet

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Part Number:
PD-93824E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/25

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications
Parameter
Units
ID @ VGS = 12V, TC = 25
 Continuous Drain or Source Current
18*
A
ID @ VGS = 12V, TC = 100
 Continuous Drain or Source Current
18*
IDM
 Pulsed Drain Current
72
PD @ TC = 25
 Max. Power Dissipation
75
W
 Linear Derating Factor
0.6
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
177
mJ
IAR
 Avalanche Current
18
A
EAR
 Repetitive Avalanche Energy
7.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
1.7
 V/ns
TJ, TSTG
 Opeating and Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 (0.063in./1.6mm from case for 10 sec)
 Weight
0.42 (Typical)
g



Description

International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. The PD-93824E has been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. The PD-93824E retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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