Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current 75* A...
PD-91737A: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 75* | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 56 | |
IDM | Pulsed Drain Current ➀ | 300 | |
PD @ TC = 25 | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current ➀ | 75* | A |
EAR | Repetitive Avalanche Energy ➀ | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 2.5 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Package Mounting Surface Temperature | 300 ( for 5 s) | ||
Weight | 3.5 (Typical ) | g |
International Rectifier's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. The PD-91737A has been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. The PD-91737A retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.