Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky Rectifier· Refer to IRHSLNA57Z60 for Lower InductanceSpecifications Parameter Unit...
PD-94237F: Features: · Co-Pack N-channel RAD-Hard MOSFET and Schottky Diode· Ideal for Synchronous Rectifiers in DC-DC Converters up to 75A Output· Low Conduction Losses· Low Switching Losses· Low Vf Schottky ...
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Parameter |
Units | ||
ID @ VGS = 12V, TC = 25 |
Continuous Drain or Source Current |
75* |
A |
ID @ VGS = 12V, TC = 100 |
Continuous Drain or Source Current |
75* | |
IDM |
Pulsed Drain Current |
300 | |
PD @ TC = 25 |
Max. Power Dissipation |
250 |
W |
Linear Derating Factor |
2.0 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
75 |
A |
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
IF (AV)@ TC = 25 |
Schottky and Body Diode Avg. Forward Current |
75* |
A |
IF (AV)@ TC =100 |
Schottky and Body Diode Avg. Forward Current |
75* | |
TJ, TSTG |
Opeating and Storage Temperature Range |
-55 to 150 |
|
Pckg. Mounting Surface Temp. |
300 (for 5s) | ||
Weight |
3.3 (Typical) |
g |
The SynchFet family of Co-Pack RAD-Hard MOSFETs and PD-94237F offers the designer an innovative, board space saving solution for switching regulator and power management applications. RAD-Hard MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop PD-94237F results in an extremely efficient device suitable for use in a wide variety of Military and Space applications.